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Gallium Nitride RF and mm Wave Technologies Review

Event details
Tuesday, 16 April 2019
9:30 am – 16:00 pm
Gallium Nitride RF & mm Wave Technologies Review

Overview: Gallium Nitride (GaN) has become the material of choice for RF power semiconductors since HEMT RF transistors were first developed in the mid-2000s. It has the highest power density and can reliably operate at higher temperatures than other semiconductor technologies, which together allow for physically smaller devices. Combine this with electron mobility that is similar to GaAs, and the result is transistors with comparatively small parasitics which deliver high power to high frequencies.

Objective: This meeting will explore the technologies and applications of GaN in the RF and millimetre wave domains, focussing on recent UKRI (Innovate UK and EPSRC) investments including the South Wales Compound Semiconductor Hub and other centres across the UK. The meeting will also include a workshop session to validate the RF & mm Wave Road-mapping carried out by the KTN Compound Semiconductors Special Interest Group.

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